Field effect transistors (FETs) offer variable output voltage, unlike bipolar junction transistors (BJTs). The most common type, MOSFET, is used in computer memory design. Other types include OFETs, JFETs, CNTFETs, gate transistors, and depleted-mode FETs, each with unique characteristics and functions. FETs are fundamental components in almost every circuit, and new concepts are continually being created.
A field effect transistor (FET) is an electronic component commonly used in integrated circuits. They are a unique type of transistor that offers a variable output voltage depending on what has been fed to them. This is in contrast to bipolar junction transistors (BJTs) which are designed to have on and off states depending on current flow. The most common type of FET in use, the metal oxide semiconductor field effect transistor (MOSFET) is often incorporated into computer memory design, as it offers higher speed with lower power consumption than BJTs.
Transistors have many different characteristics and functions for the circuits for which they are designed. Organic field-effect transistors (OFETs) are built on an organic layer substrate, which is usually some form of polymer. These transistors have flexible and biodegradable qualities and are used to make things like plastic-based video displays and solar cell sheets. Another type of FET variation is the junction field-effect transistor (JFET), which acts like a form of diode in a circuit, conducting current only if the voltage is reversed.
Carbon nanotube field-effect transistors (CNTFETs) are a form of experimental field-effect transistors that are built on individual carbon nanotubes instead of a typical silicon substrate. This makes them about 20 times smaller than the smallest transistors that can be produced with conventional thin-film technology. Their promise is to offer much faster computer processing speeds and more memory at a lower cost. They have been successfully demonstrated since 1998, but issues such as nanotube degradation in the presence of oxygen and long-term reliability under temperature or electric field stresses have kept them experimental.
Other types of field-effect transistors in common use in industry include gate transistors, such as the insulated-gate bipolar transistor (IGBT), which can handle voltages up to 3,000 volts and act as fast switches. They have various applications in many modern appliances, electric cars and railway systems, as well as being commonly used in audio amplifiers. Depleted-mode FETs are another example of a variation of the FET design and are often used as photon sensors and circuit amplifiers.
The many and complex needs of computer and electronic equipment continue to drive a diversity in the design of both the operation of transistors and the materials from which they are constructed. The field effect transistor is a fundamental component in almost every circuit. The principle for the field effect transistor was first patented in 1925, but new concepts are continually being created on how to use that idea.
Protect your devices with Threat Protection by NordVPN
