Magnetoresistance alters electric currents in an object by introducing a magnetic field. Anisotropic magnetoresistance varies based on conductivity, and different formulas can calculate the effect. The technology is used in hard drives and non-volatile memory. Different classifications of magnetoresistance include ordinary, colossal, giant, and tunnel.
The property of magnetoresistance is the ability to alter the path of electric currents flowing through an object by introducing an external magnetic field. The level of anisotropic magnetoresistance (AMR), or the rate at which particles bend in another direction due to the presence of magnets, varies based on the relative conductivity of the material being tested. This application allows electricity to pass over a larger surface area of an object to increase its overall resistance at a molecular level. Using different elements as variables, a formula can be applied to calculate the true magenresistive effect, which allows many industries to determine which types of materials would be best suited for their products.
Since many discoveries have been made in this field of science since its discovery in 1856 by the Irish inventor Lord Kelvin, this principle is now often referred to as ordinary magentoresistance (OMR). Colossal magnetoresistance (CMR) was the next classification to be adapted and is used to describe metals such as perovskite oxide’s ability to alter resistance to much greater levels than previously thought possible. It wasn’t until the late 20th century that this technology was further expanded.
In 1988, both Albert Fert and Peter Grünberg independently discovered the implementation of giant magnetoresistance (GMR), which involves stacking paper-thin metallic layers of ferromagnetic and non-magnetic elements to increase or decrease the overall resistance inside objects . Tunnel magnetoresistance (TMR) takes this concept a step further by causing electrons to spiral perpendicularly, with the ability to transcend through the non-magnetic insulator. The insulator is usually composed of crystalline magnesium oxide, which until recently was thought to violate the natural laws of classical physics. This quantum mechanical phenomenon allows several industries to implement TMR technologies that would otherwise be impossible.
Perhaps the most common example of magnetoresistance is the implementation of hard drives within computer systems. This technology allows the device to read and write data in large volumes as the built-in microscopic heating coils allow for superior control while the hard drive is in operation. This results in larger overall storage capacities with less frequent data loss. It is also used to power first generation non-volatile memory, which retains data even when there is no power source.
Protect your devices with Threat Protection by NordVPN
