Scientists are developing resistive random access memory (RRAM) to store more data than DRAM. RRAM uses resistance to store each bit of information and requires small power increments. Different types of materials can affect access time, data retention, and power usage. Titanium oxide is used in some RRAM types, and another type aligns titanium oxide in microscopic horizontal strips. Phase change memory is also being developed with RRAM as a replacement for DRAM.
To develop computer memories that can store more data than dynamic random access memory (DRAM), scientists are developing a form of memory chip called resistive random access memory (RRAM). Common types of memory like DRAM and Flash use electrical charges to store data, but RRAM uses resistance to store each bit of information. The resistance is changed by voltage and, being a non-volatile memory type, the data remains intact even when no power is applied. Each component involved in switching is located between two electrodes, and the characteristics of the memory chip are submicroscopic.
Very small power increments are required to store data to RRAM. Although it generally includes a metal oxide layer and a cover layer, there are different types of resistive memory that incorporate certain types of materials. The type of material can make a difference in the length of information access time, data retention, and failure-free memory life. How much power is used during operation can also be influenced by the type of material for the layers.
One type of RRAM uses titanium oxide which is an insulator. One side of it is mixed with oxygen molecules which can move to the other side if the voltage across the barrier is activated. Conduction can begin once with the memory switch state turned on. When the oxygen molecules return to the other side, the memory reverts to the off state. It takes fractions of a second for the on and off cycles to take place.
Another type of resistive memory aligns titanium oxide in microscopic horizontal strips between conducting wires. Most types of memory have similar components in a vertical arrangement. Resistance could be controlled on each individual strip, and the ability to alter resistance to varying degrees could create a learning capability for memory systems. Electronics companies continue to work on developing concepts for how memory will work.
Phase change memory is another type that is being developed in conjunction with RRAM. Also called conductive bridging random access memory (CBRAM), it uses a large amount of heat to change material properties to alter resistance states. Several electronics manufacturers are focusing on RRAM as a viable replacement for memory such as DRAM which is as small as possible to run efficiently.
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